[Other] Normally-off AlGaN/GaN MIS-HEMTs with high 2DEG mobility enabled by shallow recess and oxygen plasma treatment

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johnfive Post time 2025-8-1 07:43:52 | Show all posts |Read mode
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journal:Japanese Journal of Applied Physics

Authors:Masaki Ishiguro; Kishi Sekiyama; Ali Baratov; Shogo Maeda; Takahiro Igarashi; Nur Syazwani Binti Ahmad Tajuddin; Naeemul Islam; Suguru Terai; Akio Yamamoto; Masaaki Kuzuhara; Biplab Sarkar; Hiroshi Amano; Joel T. Asubar

Published date:2025-2-1

DOI:10.35848/1347-4065/adb256

PDF link:https://iopscience.iop.org/article/10.35848/1347-4065/adb256

Article link:https://doi.org/10.35848/1347-4065/adb256

Article Source:IOP Publishing


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