Effect of the High-Temperature and High-Frequency Off-State Stresses on the Evolution of Traps in AlGaN/GaN HEMTs

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journal：IEEE Transactions on Electron Devices

Authors：Fengyi Li; Juan Xue; Xu Hou; Aoran Fan; Yufeng Zhang; Fanyuan Zhang; Weigang Ma; Xing Zhang; Huaqing Xie

Published date：2025-10-

DOI：10.1109/ted.2025.3603135

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11153764

Article link：https://doi.org/10.1109/ted.2025.3603135

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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