[Other] The algorithm of insulated gated bipolar transistor (IGBT) associated with the characteristic curves in the region of gate bias slightly above the internal threshold voltage

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thanh22-07 Post time 6 day(s) ago | Show all posts |Read mode
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journalㄩJapanese Journal of Applied Physics

AuthorsㄩHsin-Chia Yang; Sung-Ching Chi; Pei-Jun Yang

Published dateㄩ2026-3-31

DOIㄩ10.35848/1347-4065/ae4308

PDF linkㄩhttps://iopscience.iop.org/article/10.35848/1347-4065/ae4308

Article linkㄩhttps://doi.org/10.35848/1347-4065/ae4308

Article SourceㄩIOP Publishing


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