[Elsevier] Advancements in N-polar GaN-based high electron mobility transistors: Device design, material engineering, and performance enhancement strategies

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journal：Progress in Quantum Electronics

Authors：Tae Joon Park; Tae-Yeon Seong; Ray-Hua Horng; Dong-Sing Wuu; Hiroshi Amano

Published date：2026-7-

DOI：10.1016/j.pquantelec.2026.100635

PDF link：https://www.sciencedirect.com/sc ... 079672726000236/pdf

Article link：https://doi.org/10.1016/j.pquantelec.2026.100635

Article Source：Elsevier BV。

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[Elsevier] Advancements in N-polar GaN-based high electron mobility transistors: Device design, material engineering, and performance enhancement strategies Copy