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[IEEE] FAB Gain Cell Memory: A Folded Asymmetric Boosted Design to Improve Sense Margin for a Refresh-Free Operation

jakir_ete_ruet Post time Yesterday 00:24 | Show all posts |Read mode
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journalㄩ2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

AuthorsㄩJay Sonawane; Sunbin Deng; Kiseok Lee; Faaiq Waqar; Chengyang Zhang; Omkar Phadke; Suman Datta; Shimeng Yu

Published dateㄩ2026-6-14

DOIㄩ10.1109/vlsitechnologyandcir65830.2026.11577450

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11577450

Article linkㄩhttps://doi.org/10.1109/vlsitechnologyandcir65830.2026.11577450

Article SourceㄩIEEE﹝


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