Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

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journal：physica status solidi (a)

Authors：Marko J. Tadjer; Patrick Waltereit; Lutz Kirste; Stefan Müller; James Spencer Lundh; Alan G. Jacobs; Andrew D. Koehler; Pavel Komarov; Peter Raad; John Gaskins; Patrick Hopkins; Vlad Odnoblyudov; Cem Basceri; Travis J. Anderson; Karl D. Hobart

Published date：2023-8-

DOI：10.1002/pssa.202200828

PDF link：https://onlinelibrary.wiley.com/ ... 1002/pssa.202200828

Article link：https://doi.org/10.1002/pssa.202200828

Article Source：Wiley。

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[Wiley] Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

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