130-nm CMOS-integrated superparamagnetic tunnel junction-based p-bit

Post time The day before yesterday 10:34

journal：IEEE Electron Device Letters

Authors：Ju-Young Yoon; Nuno Caoilo; Advait Madhavan; Jabez J. McClelland; Shun Kanai; Hideo Ohno; Shunsuke Fukami; William A. Borders

Published date：2026--

DOI：10.1109/led.2026.3696800

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11535457

Article link：https://doi.org/10.1109/led.2026.3696800

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] 130-nm CMOS-integrated superparamagnetic tunnel junction-based p-bit

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