Analysis and Mitigation Methods of Gate Oscillation in Paralleled 10 kV SiC MOSFETs

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journal：IEEE Transactions on Power Electronics

Authors：Gao Liu; Zhixing Yan; Morten Rahr Nielsen; Thore Stig Aunsborg; Bjrn Rannestad; Hongbo Zhao; Michael Mller Bech; Stig Munk-Nielsen

Published date：2025-8-

DOI：10.1109/tpel.2025.3554194

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10938261

Article link：https://doi.org/10.1109/tpel.2025.3554194

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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