[Elsevier] Impact of gate dielectric and doping concentration on the Si fork-sheet FET for next generation CMOS technology

ajeetkumar Post time 1 hour(s) ago | Show all posts |Read mode
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journalㄩMaterials Science and Engineering: B

AuthorsㄩAjeet K. Yadav; Saksham Anand; Robin Khosla

Published dateㄩ2025-12-

DOIㄩ10.1016/j.mseb.2025.118655

PDF linkㄩhttps://www.sciencedirect.com/sc ... 921510725006798/pdf

Article linkㄩhttps://doi.org/10.1016/j.mseb.2025.118655

Article SourceㄩElsevier BV


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MisterHao Post time 27 min. ago | Show all posts

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