[IEEE] Over 2.5 GW/cm2Vertical 汕-Ga2O3Schottky Barrier Diode with High-k Field Plate and Multi-Zone Gradient Rings Assisted JTE

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journalㄩ2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

AuthorsㄩLequan Wang; Jinyang Liu; Song He; Junpeng Wen; Qiuyan Li; Yuanjie Ding; Weibing Hao; Xuanze Zhou; Shu Yang; Guangwei Xu; Shibing Long

Published dateㄩ2026-5-24

DOIㄩ10.1109/ispsd64561.2026.11553726

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11553726

Article linkㄩhttps://doi.org/10.1109/ispsd64561.2026.11553726

Article SourceㄩIEEE


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