[IEEE] Over 3.5 kV (011) 汕-Ga2O3Schottky Barrier Diode and First Demonstration of 4.7 kV NiO-based (011) 汕-Ga2O3Heterojunction Diode |
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[Other]https://ieee-dataport.org/documents/smartgrid-cyberphysical-attack-dataset
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