[IEEE] 0.79 m次cm2and 1.1 kV Vertical Mo/汕-Ga2O3Deep-Trench-HJBS Diode with Double Drift Layers

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journalㄩ2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

AuthorsㄩQiuyan Li; Jinyang Liu; Qi Liu; Song He; Zaitian Han; Junpeng Wen; Lequan Wang; Weibing Hao; Xuanze Zhou; Qin Hu; Shu Yang; Guangwei Xu; Shibing Long

Published dateㄩ2026-5-24

DOIㄩ10.1109/ispsd64561.2026.11553594

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11553594

Article linkㄩhttps://doi.org/10.1109/ispsd64561.2026.11553594

Article SourceㄩIEEE


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