[IEEE] A Novel Electric field Modulation Ga2O3Schottky Barrier Diode with Nitrogen-Ion Implantation combine with Trench Field Limit Rings and Floating Metal Rings Termination

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journalㄩ2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

AuthorsㄩMoufu Kong; Mingliang Yang; Gaofu Guo; Jiaxin Li; Liang Zhao; Xiaodong Zhang

Published dateㄩ2026-5-24

DOIㄩ10.1109/ispsd64561.2026.11553575

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11553575

Article linkㄩhttps://doi.org/10.1109/ispsd64561.2026.11553575

Article SourceㄩIEEE


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