[IEEE] High-Performance and Reliability-Enhanced 汕-Ga2O3Trench Schottky Barrier Diodes with Ion-Implantation Shielding Layer

momo19 Post time 1 hour(s) ago | Show all posts |Read mode
This post will be closed automatically in 2026-06-17 10:09
Reward30points

journalㄩ2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

AuthorsㄩMing Li; Zhang Wen; Zugui Jiang; Songquan Yang; Bangyao Mao; Weizhe Bi; Leidang Zhou; Mingchao Yang; Yue Hao; Li Geng

Published dateㄩ2026-5-24

DOIㄩ10.1109/ispsd64561.2026.11553706

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11553706

Article linkㄩhttps://doi.org/10.1109/ispsd64561.2026.11553706

Article SourceㄩIEEE


Remarkㄩ

Best Answer

Please approve

View Full Content

Reply

Use magic Donate Report

All Reply1 Show all posts
Sweetums33 Post time 1 hour(s) ago | Show all posts

This post has been completed

Completed attachments will be deleted within 24 hours.
Reply

Use magic Donate Report

Senior Member
  • post

  • reply

  • points

    640


Daily Top Contributors

Return to the list