[IEEE] Extremely Low On-Resistance AlN-based SBDs with Distributed Polarization Doping Drift Layer

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journalㄩ2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

AuthorsㄩIssei Sasaki; Masanobu Hiroki; Kazuaki Ebata; Kazuyuki Hirama; Yoshitaka Taniyasu; Takuya Maeda

Published dateㄩ2026-5-24

DOIㄩ10.1109/ispsd64561.2026.11553751

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11553751

Article linkㄩhttps://doi.org/10.1109/ispsd64561.2026.11553751

Article SourceㄩIEEE


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