Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

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journal：Applied Physics Letters

Authors：Trung Huu Nguyen; Tokio Takahashi; Hiroshi Chonan; Hoang Van Nguyen; Hisashi Yamada; Toshikazu Yamada; Mitsuaki Shimizu

Published date：2021-10-4

DOI：10.1063/5.0064935

PDF link：https://pubs.aip.org/aip/apl/art ... 143503_1_online.pdf

Article link：https://doi.org/10.1063/5.0064935

Article Source：AIP Publishing。

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[Other] Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

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[Other] Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel Copy