[Elsevier] Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment

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journal:Journal of Alloys and Compounds

Authors:Yang Jiang; Fangzhou Du; Peiran Wang; Jiaqi He; Kangyao Wen; ChenKai Deng; Yi Zhang; Mujun Li; Xiaohui Wang; Zhongrui Wang; Qing Wang; Hongyu Yu

Published date:2025-4-

DOI:10.1016/j.jallcom.2025.179922

PDF link:https://www.sciencedirect.com/sc ... 92583882501480X/pdf

Article link:https://doi.org/10.1016/j.jallcom.2025.179922

Article Source:Elsevier BV


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