[Wiley] Technology CAD Modeling of GaN High〦lectron㎝obility Transistors with Superlattice Buffer Based on Mechanism of Back〨ate Characteristics

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Technology CAD Modeling of GaN High-Electron-Mobility Transistors with Superlattice Buffer Based on Mechanism of Back-Gate Characteristics
journal:physica status solidi (a)

Authors:Kosuke Miura; Takeshi Suwa; Ryohei Nega; Takao Noda

Published date:2025-12-

DOI:10.1002/pssa.202500025

PDF link:https://onlinelibrary.wiley.com/ ... 1002/pssa.202500025

Article link:https://doi.org/10.1002/pssa.202500025

Article Source:Wiley


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