[Wiley] TCAD Study of Leakage Current Suppression Mechanism by Deep P Layer and Additional Source Electrode in GaN High呷lectron和obility Transistors

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TCAD Study of Leakage Current Suppression Mechanism by Deep P Layer and Additional Source Electrode in GaN High-Electron-Mobility Transistors
journalㄩphysica status solidi (a)

AuthorsㄩTakeshi Suwa; Kosuke Miura; Ryohei Nega

Published dateㄩ2025-12-

DOIㄩ10.1002/pssa.202500032

PDF linkㄩhttps://onlinelibrary.wiley.com/ ... 1002/pssa.202500032

Article linkㄩhttps://doi.org/10.1002/pssa.202500032

Article SourceㄩWiley


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