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[IEEE] Influence of parasitic elements of busbar on the turn-off voltage oscillation of SiC MOSFET half-bridge module

formyscience Post time 4 day(s) ago | Show all posts |Read mode
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journalㄩIECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society

AuthorsㄩBo Yang; Qiongxuan Ge; Lu Zhao; Zhida Zhou; Dongdong Cui

Published dateㄩ2017-10-

DOIㄩ10.1109/iecon.2017.8216852

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=8216852

Article linkㄩhttps://doi.org/10.1109/iecon.2017.8216852

Article SourceㄩIEEE﹝


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