[Other] Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons inSi3N4Charge Trap Layer of Flash Memory Devices

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journalㄩPhysical Review Letters

AuthorsㄩJoon Hwang; Min-Kyu Park; Joonhyung Cho; Yeongheon Yang; Jong-Ho Bae; Jong-Ho Lee

Published dateㄩ--

DOIㄩ10.1103/lj4r-dcb7

PDF linkㄩhttps://link.aps.org/article/10.1103/lj4r-dcb7

Article linkㄩhttps://doi.org/10.1103/lj4r-dcb7

Article SourceㄩAmerican Physical Society (APS)


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