Gate Stack Engineering and Carrier Dynamics of Optically Triggered GaN Transistors on 650V GaN-on-Si Power Platform

Post time The day before yesterday 01:34

journal：2025 IEEE International Electron Devices Meeting (IEDM)

Authors：Rafid Hassan Palash; Jung-Han Hsia; Soumik Saha; Nittya Ananda Biswas; Qingyun Xie; Victor Moroz; Tomás Palacios; Nadim Chowdhury

Published date：2025-12-6

DOI：10.1109/iedm50572.2025.11353658

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11353658

Article link：https://doi.org/10.1109/iedm50572.2025.11353658

Article Source：IEEE。

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[IEEE] Gate Stack Engineering and Carrier Dynamics of Optically Triggered GaN Transistors on 650V GaN-on-Si Power Platform

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