[IEEE] Design of SPDT switching circuit with asymmetric structure based on 0.25um GaN HEMT process

duythucmmic Post time 5 hour(s) ago | Show all posts |Read mode
This post will be closed automatically in 2026-07-03 16:11
Reward30points

journalㄩ2025 IEEE MTT-S International Microwave Workshop Series On Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

AuthorsㄩYutong Jiang; Xu Zou; Meng Zhang; Ling Yang; Bin Hou; Mei Wu; Xitong Hong; Xiaohua Ma

Published dateㄩ2025-7-23

DOIㄩ10.1109/imws-amp66175.2025.11136480

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11136480

Article linkㄩhttps://doi.org/10.1109/imws-amp66175.2025.11136480

Article SourceㄩIEEE


Remarkㄩ

Best Answer

Please approve

View Full Content

Reply

Use magic Donate Report

All Reply1 Show all posts
Sweetums33 Post time 5 hour(s) ago | Show all posts

This post has been completed

Completed attachments will be deleted within 24 hours.
Reply

Use magic Donate Report

Return to the list