[Elsevier] Tunneling FET based on defect-free, vacancy-defected, and passivated monolayer PtSe2 channel: A first principles study

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journal：Materials Science in Semiconductor Processing

Authors：Ehsan Norouzzadeh; Saeed Mohammadi; Mahdi Moradinasab

Published date：2022-2-

DOI：10.1016/j.mssp.2021.106258

PDF link：https://www.sciencedirect.com/sc ... 369800121005941/pdf

Article link：https://doi.org/10.1016/j.mssp.2021.106258

Article Source：Elsevier BV。

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[Elsevier] Tunneling FET based on defect-free, vacancy-defected, and passivated monolayer PtSe2 channel: A first principles study Copy