Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers

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journal：IEEE Transactions on Electron Devices

Authors：Hesameddin Adib; Mohsen Mazaherifar; Shoeib Babaee Touski; Shams Mohajerzadeh

Published date：2023-11-

DOI：10.1109/ted.2023.3319302

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10284770

Article link：https://doi.org/10.1109/ted.2023.3319302

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers

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[IEEE] Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers