[Elsevier] Defect-mediated enhancement of memory window in IGZO-channel ferroelectric field effect transistors

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journalㄩMaterials Science in Semiconductor Processing

AuthorsㄩHyojin Yang; Haesung Kim; Hwan Jin Kim; Dong Myong Kim; Sung-Jin Choi; Dae Hwan Kim; Yoon Jung Lee; Jong-Ho Bae

Published dateㄩ2026-3-

DOIㄩ10.1016/j.mssp.2025.110268

PDF linkㄩhttps://www.sciencedirect.com/sc ... 369800125010078/pdf

Article linkㄩhttps://doi.org/10.1016/j.mssp.2025.110268

Article SourceㄩElsevier BV


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