Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier

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journal：IEEE Electron Device Letters

Authors：Min-Su Kim; Seong-Hyun Hwang; Seung-Hwan Kim; Jong-Hyun Kim; Euyjin Park; Kyu-Hyun Han; Hyun-Yong Yu

Published date：2023-7-

DOI：10.1109/led.2023.3279143

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10131948

Article link：https://doi.org/10.1109/led.2023.3279143

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier

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[IEEE] Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier