Valleytronics in emerging 2D materials: Advances in room‑temperature valley polarization
Author links open overlay panelMuhammad Aftab a b, Bingyang Bo a b, Juehan Sun a b, Warisha Mehmood a b, Zhiyong Tang a b, Xiaoli Wang a b
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[size=1em]https://doi.org/10.1016/j.nantod.2026.103114[size=1em]Get rights and content
Highlights• Summarize emerging 2D systems with broken symmetry and strong SOC to realize stable room-temperature valley polarization.
• Systematically review modulation strategies to extend valley lifetime and boost valley splitting at ambient temperature.
• Outline room-temperature valleytronic devices and analyze bottlenecks limiting industrialization.
AbstractIn the era of valleytronics, harnessing the valley degree of freedom (VDOF) in momentum space stands as a promising energy-efficient strategy for information storage, modification, and encoding. While VDOF is only observed in a limited range of conventional semiconductors, emerging 2D materials such as monolayer TMDs exhibit superior reliability and exceptional suitability for valleytronic applications. This advantage stems from enhanced protection via spin-valley locking, enabled by robust spin-orbit coupling and broken inversion symmetry. Nevertheless, current valleytronic systems still suffer from several critical limitations, such as low valley polarization efficiency, short valley lifetime, weak light-valley interaction, and stringent low-temperature operating requirements. These bottlenecks severely impede the practical development and industrialization of high-performance valleytronic devices. In this review, we briefly summarize recent advances in emerging 2D materials, including Janus 2D materials, ferroelectric TMD hybrids, multiferroic materials, and chiral TMD composites, which have demonstrated remarkable efficacy in enhancing spin-orbit coupling, prolonging valley lifetime, and breaking space/time-reversal symmetry, thereby enabling robust valley polarization at room temperature. Additionally, the review covers innovative mechanisms for extended valley lifetime and enhanced valley splitting through strain engineering, magnetic-field effects, and twisted light. Finally, potential applications of valleytronics are discussed for memory storage, processing devices, quantum computing and logic circuits.
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