Bias-Insensitive High Linearity of N-Polar Deep Recess GaN HEMTs With Regrown GaN Cap

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journal：IEEE Electron Device Letters

Authors：Boyu Wang; Emre Akso; Henry Collins; Vineeta Muthuraj; Kamruzzaman Khan; Christopher Clymore; Tanmay Chavan; Matthew Guidry; Stacia Keller; Umesh K. Mishra

Published date：2026-3-

DOI：10.1109/led.2026.3656195

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11359179

Article link：https://doi.org/10.1109/led.2026.3656195

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Bias-Insensitive High Linearity of N-Polar Deep Recess GaN HEMTs With Regrown GaN Cap

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