Universal Time-Dependent DIBL Model for HCD-Degraded FinFETs

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journal：IEEE Transactions on Electron Devices

Authors：Yi Gu; Wendi Wei; Kun Chen; Chen Wang; Qingqing Sun; David Wei Zhang

Published date：2025-12-

DOI：10.1109/ted.2025.3628365

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11249483

Article link：https://doi.org/10.1109/ted.2025.3628365

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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