[Springer] TCAD simulation of sub-10 nm high-k SOI GaN FinFET by implementing fin optimization approach for high-performance applications |
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https://link.springer.com/article/10.1007/s11894-025-01022-1
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TCAD simulation of sub-10 nm high-k SOI GaN FinFET by implementing fin optimization approach for high-performance applications
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Exploring and Exploiting Model Uncertainty for Robust VQA
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[Single chapter]Integrating Local Stroke Registry Data into a Predictive Digital Twin Platform: A Proof-of-Concept for Acute Stroke Monitoring
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Cryospheric Processes Responsible for Lake Formation: A Review on Lake Types, Threats, Status, and Their Distribution within the Himalaya
