Electroplated Copper as Front-Side Source Metal for Enhanced Electrical Performance and Reliability of 1200 V Planar SiC MOSFETs

Post time 2026-8-14 13:09:12

journal：2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Authors：Cen Tang; Hongsheng Yi; Junyou Wang; Yuehua Hong; Longgu Tang; Wei Lu; Wentao Yang; Jin Rao; Hamada Kimimori

Published date：2026-5-24

DOI：10.1109/ispsd64561.2026.11554019

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11554019

Article link：https://doi.org/10.1109/ispsd64561.2026.11554019

Article Source：IEEE。

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Post time 2026-8-14 13:09:13

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[IEEE] Electroplated Copper as Front-Side Source Metal for Enhanced Electrical Performance and Reliability of 1200 V Planar SiC MOSFETs

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