[Other] High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

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journalㄩJournal of Applied Physics

AuthorsㄩSuman Das; Tamara Isaacs-Smith; Ayayi Ahyi; Marcelo A. Kuroda; Sarit Dhar

Published dateㄩ2021-12-14

DOIㄩ10.1063/5.0073523

PDF linkㄩhttps://aip.scitation.org/doi/am-pdf/10.1063/5.0073523

Article linkㄩhttps://doi.org/10.1063/5.0073523

Article SourceㄩAIP Publishing


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