[Other] Investigation of Enhancement-Mode AlGaN/GaN MIS-HEMT with Recessed Gate Structure

rashahamad Post time 1 hour(s) ago | Show all posts |Read mode
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Title:
Investigation of Enhancement-Mode AlGaN/GaN MIS-HEMT with Recessed Gate Structure

Authors:
Wenbo Xiao
Xueqin Sun
Le Huang
Jingbo Li

Journal:
Semiconductors

Publisher:
Pleiades Publishing / Springer Nature

Article Type:
Research Article

Publication Date:
25 November 2024

Year:
2024

Volume:
58

Pages:
637每644

DOI:
10.1134/S1063782624700089

Language:
English

Keywords:
AlGaN/GaN MIS-HEMT
Enhancement-Mode
Recessed Gate
Gate Structure
Normally-Off HEMT
GaN
AlGaN
Metal-Insulator-Semiconductor
High Electron Mobility Transistor
Threshold Voltage
Wide Bandgap Semiconductor

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