[Elsevier] Analysis of a thin P-type buried layer IGBT with high breakdown voltage and low switching loss

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journal：Microelectronics Journal

Authors：Yixuanzhe Zhou; Quanyuan Feng; Xinchi Zhou

Published date：2026-10-

DOI：10.1016/j.mejo.2026.107400

PDF link：https://www.sciencedirect.com/sc ... 879239126003565/pdf

Article link：https://doi.org/10.1016/j.mejo.2026.107400

Article Source：Elsevier BV。

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[Elsevier] Analysis of a thin P-type buried layer IGBT with high breakdown voltage and low switching loss Copy