[Elsevier] Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473K down to 173K for analog applications

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journal：Solid-State Electronics

Authors：V.C.P. Silva; J.A. Martino; E. Simoen; A. Veloso; P.G.D. Agopian

Published date：2023-10-

DOI：10.1016/j.sse.2023.108729

PDF link：https://www.sciencedirect.com/sc ... 038110123001429/pdf

Article link：https://doi.org/10.1016/j.sse.2023.108729

Article Source：Elsevier BV。

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[Elsevier] Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473K down to 173K for analog applications Copy