Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

Post time 3 day(s) ago

journal：Chinese Physics B

Authors：Shao-Hua Yang; Zhan-Gang Zhang; Zhi-Feng Lei; Yun Huang; Kai Xi; Song-Lin Wang; Tian-Jiao Liang; Teng Tong; Xiao-Hui Li; Chao Peng; Fu-Gen Wu; Bin Li

Published date：2022-11-1

DOI：10.1088/1674-1056/ac785a

PDF link：https://iopscience.iop.org/article/10.1088/1674-1056/ac785a

Article link：https://doi.org/10.1088/1674-1056/ac785a

Article Source：IOP Publishing。

Remark：

Post time The day before yesterday 02:34

: Waiting for confirmation
If the PDF has not been accepted after 72 hours, the system will automatically adopt it.

[IOP] Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

Same Category

Latest Reply

Announcement

Daily Top Contributors

[IOP] Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs Copy

Same Category

Latest Reply

Announcement

Daily Top Contributors

[IOP] Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs