Cryogenic Forming/Breakdown of HfO$_{x}$ for Reduced C2C Variability in Filamentary RRAM

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journal：IEEE Transactions on Electron Devices

Authors：Siddharth Kurup; Madhav Vadlamani; Fanuel Mammo; Abraham L. Weinstein; Michael A. Filler; Shimeng Yu; Eric M. Vogel

Published date：2026-7-

DOI：10.1109/ted.2026.3696937

PDF link：https://ieeexplore.ieee.org/ielam/16/11578259/11541218-aam.pdf

Article link：https://doi.org/10.1109/ted.2026.3696937

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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