[IEEE] Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

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journal:2008 IEEE International Electron Devices Meeting

Authors:H. Y. Lee; P. S. Chen; T. Y. Wu; Y. S. Chen; C. C. Wang; P. J. Tzeng; C. H. Lin; F. Chen; C. H. Lien; M.-J. Tsai

Published date:2008-12-

DOI:10.1109/iedm.2008.4796677

PDF link:https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=4796677

Article link:https://doi.org/10.1109/iedm.2008.4796677

Article Source:IEEE


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