[ACS] First Observation of Dislocation Pairs in High-Quality N-Polar GaN Films Grown on Free-Standing GaN Substrates by MOCVD |
|
This post will be closed automatically in 2026-09-22 12:21
Reward15points
|
10
Exploiting BridgedConformations for Precise MolecularRecognition in the Design of KRAS-Selective, Orally Available MacrocyclicPeptides
10
Colonization Mechanism of Endophytes with Plants and Their Role in Pesticides Degradation
10
Recent Advances in Solid-State Batteries
10
Defect-EngineeredF-ZnO@V2O5–xHeterostructuresfor Visible-Light-DrivenEnvironmental Remediation
15
Improvements inStructural and Optical Characteristicsof N-Polar AlGaN Films Deposited on In Situ Grown GaN HexagonalPrisms
