[Wiley] Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert Wゝunction

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journal:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Authors:Nouari Rouag; Meriem Trad; Belkhir Aounallah; Zahir Ouennoughi; Adelmo Ortiz〤onde

Published date:2023-11-

DOI:10.1002/jnm.3115

PDF link:https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/jnm.3115

Article link:https://doi.org/10.1002/jnm.3115

Article Source:Wiley


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