[IEEE] A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput

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journal:2025 IEEE International Solid-State Circuits Conference (ISSCC)

Authors:Wanik Cho; Chanhui Jeong; Jongwoo Kim; Jongseok Jung; Keunseon Ahn; Jayoon Goo; Sangkyu Lee; Kayoung Cho; Tei Cho; Dauni Kim; Gwan Park; Yushin Ahn; Sooyeol Chai; Gwihan Ko; Sunyoung Jung; Eunwoo Jo; Taehun Park; Jinhyun Ban; Cheoljoong Park; Jae Hyun Park; Sanghoon Oh; Sojin Jeong; Youngjun Kwak; Kyungsoo Jeong; Jinyeop Kim; Minchol Shin; Eunho Yang; Taisik Shin; Youngil Kim; Jiseong Mun; Chanyang Ryu; Huihyeon Park; Changwan Ha; Jong Tai Park; Peng Zhang; Sooyong Park; Rezaul Haque; Hang Tian; Sunghwa Ok; Wonbeom Choi; Junyoun Lim; Dongkyu Yoon; Sechun Park; Wonsun Park; Kichang Gwon; Seungpil Lee; Hwang Huh; Woopyo Jeong; Jungdal Choi

Published date:2025-2-16

DOI:10.1109/isscc49661.2025.10904748

PDF link:https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10904748

Article link:https://doi.org/10.1109/isscc49661.2025.10904748

Article Source:IEEE


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