[Other] Electrical impact of dislocations in lateral and quasi-vertical GaN-on-Si diodes

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Electrical impact of dislocations in lateral and quasi-vertical GaN-on-Si diodes


https://repositum.tuwien.at/handle/20.500.12708/197048

Record link:
https://doi.org/10.34726/hss.2024.119609
http://hdl.handle.net/20.500.12708/197048

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Title:
Electrical impact of dislocations in lateral and quasi-vertical GaN-on-Si diodes
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Citation:
Stabentheiner, M. (2024). Electrical impact of dislocations in lateral and quasi-vertical GaN-on-Si diodes [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2024.119609


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reposiTUm DOI:
10.34726/hss.2024.119609
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CatalogPlus:
AC17159194
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Publication Type:
Thesis - Dissertation
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Language:
English
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Authors:
Stabentheiner, Manuel [/url]
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Advisor:
Pogany, Dionyz [url=https://repositum.tuwien.at/cris/rp/rp00988]

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Organisational Unit:
E362 - Institut f邦r Festkörperelektronik [url=https://repositum.tuwien.at/cris/ou/ou00121][/url]
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Date (published):
2024
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Number of Pages:
116
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Keywords:
GaN; Leistungsbauelement; Versaetzung; Defekte
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GaN; Power device; dislocation; defects
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Additional information:
Zusammenfassung in deutscher Sprache
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers

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