[IEEE] Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

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journalㄩIEEE Electron Device Letters

AuthorsㄩManh-Cuong Nguyen; Sihyun Kim; Kitae Lee; Ji-Yong Yim; Rino Choi; Daewoong Kwon

Published dateㄩ2021-9-

DOIㄩ10.1109/led.2021.3096248

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=9481131

Article linkㄩhttps://doi.org/10.1109/led.2021.3096248

Article SourceㄩInstitute of Electrical and Electronics Engineers (IEEE)﹝


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