Performance enhancement ofβ-Ga2O3on Si (100) based Schottky barrier diodes using REduced SURface Field

Post time 7 day(s) ago

Edited by TanV at 2026-10-22 13:45

journal：Semiconductor Science and Technology

Authors：Manoj K Yadav; Arnab Mondal; Shivangi Shringi; Satinder K Sharma; Ankush Bag

Published date：2020-8-1

DOI：10.1088/1361-6641/ab8e64

PDF link：https://iopscience.iop.org/article/10.1088/1361-6641/ab8e64

Article link：https://doi.org/10.1088/1361-6641/ab8e64

Article Source：IOP Publishing。

Remark：

Post time 7 day(s) ago

: This post has been completed
Completed attachments will be deleted within 24 hours.

[IOP] Performance enhancement ofβ-Ga2O3on Si (100) based Schottky barrier diodes using REduced SURface Field

Best Answer

Same Category

Latest Reply

Announcement

Daily Top Contributors

[IOP] Performance enhancement ofβ-Ga2O3on Si (100) based Schottky barrier diodes using REduced SURface Field Copy

Best Answer

Same Category

Latest Reply

Announcement

Daily Top Contributors

[IOP] Performance enhancement ofβ-Ga2O3on Si (100) based Schottky barrier diodes using REduced SURface Field