[IEEE] Mitigation of Short-Channel Effects in Ultra-Scaled AlN/汕Ga2O3High Electron Mobility Transistors

rashahamad Post time 6 day(s) ago | Show all posts |Read mode
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journalㄩIEEE Transactions on Device and Materials Reliability

AuthorsㄩAntony David; Ankush Bag; Rahul Kumar

Published dateㄩ2026-9-

DOIㄩ10.1109/tdmr.2026.3723461

PDF linkㄩhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11655208

Article linkㄩhttps://doi.org/10.1109/tdmr.2026.3723461

Article SourceㄩInstitute of Electrical and Electronics Engineers (IEEE)﹝


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