[Elsevier] Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/汕-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications

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journalㄩMaterials Science and Engineering: B

AuthorsㄩG. Purnachandra Rao; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

Published dateㄩ2023-7-

DOIㄩ10.1016/j.mseb.2023.116498

PDF linkㄩhttps://www.sciencedirect.com/sc ... 921510723002404/pdf

Article linkㄩhttps://doi.org/10.1016/j.mseb.2023.116498

Article SourceㄩElsevier BV﹝


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