[Elsevier] Field-plated and back-barrier engineered wide-bandgap III-nitride/汕-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications

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journalㄩMicroelectronics Reliability

AuthorsㄩG. Purnachandra Rao; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

Published dateㄩ2024-4-

DOIㄩ10.1016/j.microrel.2024.115365

PDF linkㄩhttps://www.sciencedirect.com/sc ... 026271424000453/pdf

Article linkㄩhttps://doi.org/10.1016/j.microrel.2024.115365

Article SourceㄩElsevier BV﹝


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