[IOP] Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

johnfive Post time 6 day(s) ago | Show all posts |Read mode
This post will be closed automatically in 2026-10-27 09:19
Reward10points

journalㄩSemiconductor Science and Technology

AuthorsㄩAnchal Agarwal; Chirag Gupta; Yuuki Enatsu; Stacia Keller; Umesh Mishra

Published dateㄩ2016-12-1

DOIㄩ10.1088/0268-1242/31/12/125018

PDF linkㄩhttp://stacks.iop.org/0268-1242/31/i=12/a=125018/pdf

Article linkㄩhttps://doi.org/10.1088/0268-1242/31/12/125018

Article SourceㄩIOP Publishing﹝


Remarkㄩ

Best Answer

Please approve

View Full Content

Reply

Use magic Donate Report

All Reply1 Show all posts
Sweetums33 Post time 6 day(s) ago | Show all posts

This post has been completed

Completed attachments will be deleted within 24 hours.
Reply

Use magic Donate Report

Senior Member
  • post

  • reply

  • points

    2170

Return to the list