[Elsevier] 2kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates

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journal：Materials Science in Semiconductor Processing

Authors：Justyna Wierzbicka; Wojciech Hendzelek; Maciej Kamiński; Jarosaw Tarenko; Joanna Jankowska-liwińska; Aleksandra Wójcicka; Oskar Sadowski; Aneta Gobiowska; Krzysztof Urbanowski; Veronica Gao Zhan; Anna Szerling; Andrzej Taube

Published date：2026-5-

DOI：10.1016/j.mssp.2025.110385

PDF link：https://www.sciencedirect.com/sc ... 369800125011242/pdf

Article link：https://doi.org/10.1016/j.mssp.2025.110385

Article Source：Elsevier BV。

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